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Package Marking and Ordering Information
Part Number
FQPF5N40
Top Mark
FQPF5N40
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25°C
V DS = 400 V, V GS = 0 V
V DS = 320 V, T C = 125°C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
400
--
--
--
--
--
--
0.38
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 1.5 A
V DS = 50 V, I D = 1.5 A
3.0
--
--
--
1.27
2.8
5.0
1.6
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
--
--
--
350
60
7
460
80
9
pF
pF
pF
Switching Characteristics
t d(on) Turn-On Delay Time
t r Turn-On Rise Time
t d(off) Turn-Off Delay Time
V DD = 200 V, I D = 4.5 A,
R G = 25 Ω
)
--
--
--
12
60
20
30
130
50
ns
ns
ns
t f
Q g
Q gs
Q gd
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DS = 320 V, I D = 4.5 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
30
10
3.0
4.5
70
13
--
--
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
3.0
12
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 3.0 A
V GS = 0 V, I S = 4.5 A,
dI F / dt = 100 A/ μ s
--
--
--
--
190
1.0
1.5
--
--
V
ns
μ C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 56 mH, I AS = 3.0 A, V DD = 50 V, R G = 25 Ω, starting T J = 25°C.
3. I SD ≤ 4.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS, starting T J = 25°C.
4. Essentially independent of operating temperature.
?2000 Fairchild Semiconductor Corporation
FQPF5N40 Rev. C1
2
www.fairchildsemi.com
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